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The IKD10N60RAATMA2 is a single Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing Silicon technology and belonging to the Trenchstop RC series. It features a TO-252-3 surface-mount package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 20 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.65 V and supports a power dissipation of 150 W. Operating within a temperature range of -40°C to +175°C, it includes an integrated anti-parallel diode with a gate-emitter voltage limit of ±20 V.
This component is officially classified as End-of-Life (EOL) by the manufacturer. Distribution channels indicate that Mouser does not currently stock this item in the specified region. Verification of availability through alternative authorized distributors or secondary market suppliers is required before integration into new designs. Engineering change notices should be monitored for final disposal timelines.
Select this part when a compact SMD solution with integrated freewheeling capability is needed for 600V applications. The TO-252-3 package suits automated surface-mount assembly processes. Ensure thermal management strategies accommodate the 150W dissipation rating. Verify that the 20A continuous current rating meets the specific load requirements under expected operating temperatures.
Part of the Trenchstop RC family, designed for high-efficiency power conversion. The 'R' suffix typically denotes the integrated reverse-conducting diode configuration. The 'ATMA2' suffix indicates specific tape-and-reel packaging for automated manufacturing. This discrete component serves as a fundamental building block for medium-power switching stages.
IKD10N60RF is a recommended non-new-design alternative within the same series offering similar electrical characteristics and pinout compatibility.
The maximum collector-emitter voltage (VCEO) is rated at 600 V.
Yes, it is a reverse-conducting IGBT featuring an integrated anti-parallel diode.
The maximum operating temperature is specified as +175°C.