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The IKD10N60RATMA1 is a TRENCHSTOP RC-Series IGBT with an integrated diode, designed for hard switching applications. It features a PG-TO252-3 package and supports a collector-emitter voltage of 600 V. The device provides a continuous collector current of 20 A at 25°C case temperature and 10 A at 100°C. Key electrical parameters include a collector-emitter saturation voltage of 1.65 V and a diode forward voltage of 1.70 V at 25°C. It operates within a junction temperature range of -40°C to +175°C and offers short-circuit withstand capability of 5 µs.
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure compatibility with PG-TO252-3 footprint dimensions during PCB layout. Confirm RoHS compliance status and lead-free plating requirements for the target assembly process.
Select this component for designs requiring space-saving integration of an IGBT and freewheeling diode in a single package. Evaluate thermal resistance values relative to the expected ambient conditions and heatsinking strategy. Consider the operating frequency range of 1 to 20 kHz when assessing switching energy losses.
This part belongs to the Infineon TRENCHSTOP RC-Series, which combines reverse-conducting IGBT technology with integrated diodes. The series targets applications needing reduced component count and improved EMI performance through optimized switching characteristics.
IKD10N60RF
The device supports a short-circuit withstand time of 5 µs at a junction temperature of 150°C.
Yes, the datasheet specifies an integrated gate resistor (rG) for this specific variant.
The operating junction temperature range is from -40°C to +175°C.