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The IKD10N60RC2ATMA1 is a monolithically integrated IGBT with an anti-parallel diode from Infineon's TRENCHSTOP RC-Series, designed for hard-switching applications. It features a PG-TO252-3 package and supports a maximum junction temperature of 175°C. Key electrical parameters include a collector-emitter voltage (VCE) of 600 V, a continuous collector current (IC) of 18.8 A at 25°C case temperature, and a saturation voltage (VCEsat) of 2.0 V at 25°C. The device offers a short-circuit withstand time of 3 µs and operates within a switching frequency range up to 20 kHz.
Verify the specific ordering suffix ATMA1 against official documentation to confirm reel packaging specifications. Ensure that the procurement channel sources genuine Infineon components to maintain compliance with JEDEC industrial validation standards. Confirm that the application environment respects the absolute maximum ratings defined in the datasheet to guarantee long-term reliability.
Select this component for cost-effective designs requiring integrated reverse conduction in hard-switching topologies. The PG-TO252-3 package facilitates surface-mount assembly while supporting high thermal performance. Consider the 600 V rating and 10 A nominal current capability when designing circuits for general-purpose drives or household appliance power stages.
This part belongs to the TRENCHSTOP RC-Series, which combines IGBT and diode technologies for efficient power conversion. The ATMA1 suffix indicates tape-and-reel packaging suitable for automated surface-mount production. The device is qualified for industrial applications according to relevant JEDEC tests but is not automotive qualified under AEC-Q100 standards.
Direct replacements must match the 600 V rating, TO-252-3 package, and reverse-conducting configuration. Verify that alternative devices offer comparable short-circuit withstand times and thermal resistance characteristics to ensure circuit compatibility without redesign.
No, the product is not qualified according to the AEC-Q100 or AEC-Q101 documents of the Automotive Electronics Council.
The device has a short-circuit withstand time of 3 µs when VGE is 15.0 V and VCC is less than or equal to 400 V.
No, the diode is monolithically integrated with the IGBT and shares the same package terminals; it does not have an independent gate control.