SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IKFW50N65DH5 is a high-speed IGBT in TRENCHSTOPTM 5 technology, copacked with a RAPID fast and soft antiparallel diode in a fully isolated PG-HSIP247-3-2 package. It features a 650V breakdown voltage, 50A DC collector current at Th=25°C, and a VCEsat of 1.8V at Tvj=25°C. The device supports a maximum junction temperature of 175°C and offers 2500VRMS electrical isolation.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm lead times and availability status. Ensure the application environment complies with JEDEC industrial qualification standards. Confirm that thermal management solutions accommodate the specified thermal resistance values under actual operating conditions.
Select this component for applications requiring high-speed switching with integrated anti-parallel diode functionality. The fully isolated package eliminates the need for external insulating materials, simplifying assembly. Consider the 175°C maximum junction temperature capability for high-temperature operation scenarios.
This part belongs to the TRENCHSTOPTM 5 Advanced Isolation series from Infineon Technologies. It represents an evolution in high-voltage power switching, combining silicon IGBT technology with advanced packaging to provide galvanic isolation directly within the component footprint.
Officially documented as a plug-and-play replacement for previous generation IGBTs in similar voltage and current ratings. Verify pinout compatibility and thermal interface requirements when substituting into existing designs.
The device provides 2500VRMS electrical isolation at 50/60Hz for 1 minute.
No, the product is not qualified according to AEC Q100 or AEC Q101 documents.
It uses the PG-HSIP247-3-2 package, which is a fully isolated TO-247 variant.