IKFW60N60EH3XKSA1

$9.12

Description：IGBT
Series：-

SKU:90723ef40c61 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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IKFW60N60EH3XKSA1

Overview

The IKFW60N60EH3XKSA1 is a third-generation IGBT copacked with a Rapid 1 fast and soft antiparallel diode in a fully isolated PG-TO247-3-AI package. It features TRENCHSTOP technology for low VCE(sat) and low EMI. Key electrical parameters include a collector-emitter voltage (VCE) of 600 V, a DC collector current (IC) of 50 A at Th=25°C, and a saturation voltage (VCEsat) of 1.85 V at Tvj=25°C. The device supports a maximum junction temperature of 175°C and offers 2500 VRMS electrical isolation. Short circuit withstand time is 5 µs at Tvj=175°C.

Feature Summary

Fully isolated package providing 2500 VRMS electrical isolation
TRENCHSTOP technology ensuring low VCE(sat) and positive temperature coefficient
Copacked with Rapid 1 fast and soft antiparallel diode
Short circuit withstand capability of 5 µs at maximum junction temperature

Applications

General Purpose Drives (GPD)
Servo Drives
Industrial SMPS
Industrial UPS
Solar String Inverter

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Ensure that assembly procedures adhere to the recommended heatsink flatness and roughness specifications to maintain the integrity of the advanced isolation layer during installation.

Selection Notes

Select this component for industrial applications requiring high switching speed and galvanic isolation within a single TO-247 footprint. Consider the thermal resistance values and power dissipation limits relative to the expected operating junction temperature range of -40°C to +175°C when designing the thermal management system.

Part Context

This part belongs to the HighSpeed 3 series of TRENCHSTOP™ Advanced Isolation IGBTs. It integrates a silicon IGBT chip with a Rapid 1 diode chip in a specialized package designed to eliminate the need for external insulating materials between the device and the heatsink.