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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A HSIP247
- Series：Trenchstop™ 5
- Mfr：Infineon Technologies
- Package：Bulk,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 60A
- Power - Max：148 W
- Switching Energy：1.48mJ (on), 660µJ (off)
- Input Type：Standard
- Gate Charge：144 nC
- Td (on/off) @ 25°C：24ns/152ns
- Test Condition：400V, 60A, 8Ohm, 15V
- Reverse Recovery Time (trr)：71 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-HSIP247-3-2
- Grade：-
- Qualification：-
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Overview
The IKFW75N65ES5 is a TRENCHSTOPTM 5 Advanced Isolation IGBT copacked with a full current rated RAPID 1 fast and soft antiparallel diode. It features high-speed S5 technology for hard and soft switching, offering very low VCEsat of 1.35V at nominal current. The device has a 650V breakdown voltage, maximum junction temperature of 175°C, and Pb-free lead plating compliant with RoHS standards.
Feature Summary
- High-speed smooth switching device suitable for both hard and soft switching applications
- Very low collector-emitter saturation voltage (VCEsat) at nominal current
- Copacked with a full current rated RAPID 1 fast and soft antiparallel diode
- Advanced isolation package providing complete electrical isolation
Applications
- Resonant converters
- Uninterruptible power supplies
- Welding converters
- Mid to high range switching frequency converters
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all relevant JEDEC qualification tests for industrial applications as stated in the datasheet. Ensure compatibility with the intended thermal management solution given the specified thermal resistance values.
Selection Notes
Select this component for designs requiring advanced isolation and high-speed switching capabilities. Consider the low VCEsat for improved efficiency in mid-to-high frequency applications. Evaluate the thermal performance based on the specified Rth(j-h) values and maximum operating temperature limits. Ensure gate drive requirements align with the specified VGE thresholds and charge characteristics.
Part Context
This part belongs to the TRENCHSTOPTM 5 family, known for high-speed soft-switching IGBTs. It is designed as a plug-and-play replacement for previous generation IGBTs while offering enhanced performance through advanced isolation technology. The copackaged diode simplifies circuit design by integrating fast recovery characteristics directly with the IGBT.
Replacement Considerations
Officially documented as a plug-and-play replacement for previous generation IGBTs within the TRENCHSTOPTM 5 family. Verify pinout compatibility and thermal characteristics when substituting older models. Ensure that the replacement maintains the required isolation voltage and switching speed specifications for the application.
