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The IKP03N120H2 is a single N-channel IGBT from Infineon Technologies, utilizing HighSpeed 2 technology. It features an integrated anti-parallel Emitter Controlled HE diode and is housed in a PG-TO-220-3-1 package. The device supports a collector-emitter voltage of 1200 V and a continuous triangular collector current of 9.6 A at 25°C. It operates within a junction temperature range of -40 to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the component meets JEDEC qualification standards required for the target application environment before finalizing procurement decisions.
Select this component for applications requiring optimized turn-off energy at low currents. Consider the thermal resistance characteristics and the specific switching frequency limits when designing the heat dissipation system for the intended operating conditions.
This part belongs to the HighSpeed 2 product family designed for 1200V applications. It shares technical similarities with the IKW03N120H2, differing primarily in the physical package configuration while maintaining identical electrical performance parameters.
IKW03N120H2
The maximum collector-emitter saturation voltage is 2.8 V at a junction temperature of 150°C.
Yes, it includes an integrated anti-parallel Emitter Controlled HE diode.