IKP03N120H2XKSA1

IKP03N120H2XKSA1

  • Description:IGBT 1200V 9.6A TO220-3
  • Series:-

SKU:d3ba9c29b850 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 1200V 9.6A TO220-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):9.6 A
  • Current - Collector Pulsed (Icm):9.9 A
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 3A
  • Power - Max:62.5 W
  • Switching Energy:290µJ
  • Input Type:Standard
  • Gate Charge:22 nC
  • Td (on/off) @ 25°C:9.2ns/281ns
  • Test Condition:800V, 3A, 82Ohm, 15V
  • Reverse Recovery Time (trr):42 ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:PG-TO220-3-1
  • Grade:-
  • Qualification:-

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IKP03N120H2XKSA1

Overview

The IKP03N120H2 is a single N-channel IGBT from Infineon Technologies, utilizing HighSpeed 2 technology. It features an integrated anti-parallel Emitter Controlled HE diode and is housed in a PG-TO-220-3-1 package. The device supports a collector-emitter voltage of 1200 V and a continuous triangular collector current of 9.6 A at 25°C. It operates within a junction temperature range of -40 to +150°C.

Feature Summary

  • HighSpeed 2 Technology for resonant circuit loss reduction
  • Integrated soft, fast recovery anti-parallel diode
  • Temperature stable behavior with parallel switching capability

Applications

  • Switching Mode Power Supplies (SMPS)
  • Lamp Ballasts
  • Zero Voltage Switching (ZVS) Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the component meets JEDEC qualification standards required for the target application environment before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring optimized turn-off energy at low currents. Consider the thermal resistance characteristics and the specific switching frequency limits when designing the heat dissipation system for the intended operating conditions.

Part Context

This part belongs to the HighSpeed 2 product family designed for 1200V applications. It shares technical similarities with the IKW03N120H2, differing primarily in the physical package configuration while maintaining identical electrical performance parameters.

Replacement Considerations

IKW03N120H2

FAQ

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is 2.8 V at a junction temperature of 150°C.

Does the device include an integrated diode?

Yes, it includes an integrated anti-parallel Emitter Controlled HE diode.

IKP03N120H2XKSA1IKP03N120H2XKSA1

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