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The IKP08N65F5XKSA1 is a single N-channel IGBT from Infineon's TRENCHSTOP™ 5 series, utilizing silicon technology. It features a TO-220FP-3 package for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 10.8 A at 25°C. The device exhibits a collector-emitter saturation voltage (VCE(sat)) of 1.6 V. Maximum power dissipation (Pd) is rated at 31.2 W. Operating temperatures range from -40°C to +175°C.
Verify the specific suffix XKSA1 against official datasheets to confirm packaging and tape-and-reel specifications. Ensure compatibility with existing thermal management designs given the 31.2 W dissipation rating. Cross-reference RoHS compliance status directly with manufacturer documentation prior to integration.
Select this component for circuits requiring 650 V blocking capability with moderate current handling up to 10.8 A. The TO-220FP-3 package facilitates efficient heat sinking compared to standard variants. Evaluate gate charge requirements against driver capabilities to ensure optimal switching speeds within the intended frequency range.
This part belongs to the broader TRENCHSTOP™ 5 family of IGBTs, which are engineered for improved efficiency in hard-switching applications. The 'IKP' prefix typically denotes a specific package and current rating configuration within Infineon's discrete semiconductor portfolio, distinct from higher-power TO-247 modules.
Direct substitutes may include other Infineon parts within the same TRENCHSTOP™ 5 generation sharing identical pinouts and electrical ratings, such as IKP08N65H5 or similar F5/H5 variants, provided thermal and switching characteristics align with the original design constraints.