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The IKP08N65H5 is a 650V IGBT in TRENCHSTOPTM 5 technology, copacked with a RAPID1 fast and soft antiparallel diode. It features a PG-TO220-3 package with a maximum junction temperature of 175°C. Key electrical parameters include a collector-emitter voltage (VCE) of 650V, a DC collector current (IC) of 18A at 25°C case temperature, and a collector-emitter saturation voltage (VCEsat) of 1.65V at 25°C. The device offers low gate charge (QG) of 22nC and switching energies of 0.07mJ (Eon) and 0.03mJ (Eoff).
Verify the specific ordering suffix against Infineon's official documentation to confirm exact packaging and marking configurations. Confirm RoHS compliance and Pb-free lead plating status directly from the manufacturer's datasheet or material content declaration before finalizing procurement specifications.
Select this component for industrial power control applications requiring high-speed switching capabilities within the fifth generation TRENCHSTOP family. Ensure thermal management design accommodates the specified thermal resistance values and that operating conditions remain within the recommended 80% of maximum ratings for optimal reliability.
This part belongs to the High-speed 5 IGBT series utilizing TRENCHSTOPTM 5 technology. It represents an evolution in discrete power modules designed for mid-range current applications, offering enhanced switching characteristics compared to previous generations while maintaining compatibility with standard industrial mounting requirements.
Officially documented as a plug-and-play replacement for previous generation IGBTs. Verify pinout and thermal interface compatibility when substituting older models in existing designs.
The DC collector current is rated at 18.0 A at a case temperature of 25°C and 11.0 A at 100°C.
Yes, the IGBT is copacked with a RAPID1 fast and soft antiparallel diode.
The maximum operating junction temperature (Tvj) is 175°C.