IKP20N60H3XKSA1

$2.71

Description：IGBT TRENCH FS 600V 40A TO220-3
Series：TrenchStop®

SKU:d859023bc854 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 600V 40A TO220-3
Series：TrenchStop®
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：80 A
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 20A
Power - Max：170 W
Switching Energy：690µJ
Input Type：Standard
Gate Charge：120 nC
Td (on/off) @ 25°C：16ns/194ns
Test Condition：400V, 20A, 14.6Ohm, 15V
Reverse Recovery Time (trr)：112 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：PG-TO220-3
Grade：-
Qualification：-

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IKP20N60H3XKSA1

Overview

The IKP20N60H3XKSA1 is a single N-channel IGBT in Trench and Fieldstop technology with an integrated anti-parallel diode. It features a collector-emitter voltage of 600 V, a continuous collector current of 40 A at 25°C, and a saturation voltage of 1.95 V. The device supports a maximum junction temperature of 175°C and offers short-circuit withstand capability up to 5 µs.

Feature Summary

TRENCHSTOPTM technology providing low saturation voltage and reduced electromagnetic interference
Integrated soft, fast-recovery anti-parallel diode for efficient switching applications
Qualified according to JEDEC standards for industrial target applications

Applications

Uninterruptible power supplies
Welding converters
Converters with high switching frequency

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and compliance status. Confirm that the component meets all required environmental regulations and thermal specifications for the intended industrial application before finalizing procurement.

Selection Notes

Select this component for designs requiring robust short-circuit protection and high-speed switching capabilities. Ensure the gate drive circuitry accommodates the specified threshold voltage and internal emitter inductance to optimize switching performance and minimize losses.

Part Context

This part belongs to the High-speed switching series third generation from Infineon Technologies. It utilizes Trench and Fieldstop technology to achieve superior electrical characteristics compared to standard IGBTs, making it suitable for demanding industrial power control environments.