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The IKP20N65H5XKSA1 is a high-speed IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 1 fast and soft anti-parallel diode. It features a 650V breakdown voltage and operates up to a maximum junction temperature of 175°C. The device offers low gate charge (48 nC) and optimized switching characteristics for hard-switching and resonant topologies.
Verify the exact ordering suffix against official Infineon documentation to confirm package type and compliance status. Confirm that the component meets specific environmental requirements such as RoHS compliance and lead-free plating before finalizing procurement specifications.
Select this component for designs requiring high-speed switching capabilities within the fifth-generation TRENCHSTOP family. Ensure thermal management aligns with the specified junction-to-case thermal resistance values to maintain reliability under continuous operating conditions.
This part belongs to the High Speed Fifth Generation series from Infineon Technologies. It utilizes TRENCHSTOP™ 5 technology combined with RAPID 1 diode integration, providing a compact solution for industrial power control applications requiring efficient energy conversion.
Officially documented as a plug-and-play replacement for previous generation IGBTs within the same voltage and current ratings.