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The IKP30N65F5 is a high-speed IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a 650V breakdown voltage, a maximum junction temperature of 175°C, and low gate charge (QG). The component utilizes PG-TO220-3 packaging.
Verify the specific package type and electrical ratings against the official Infineon datasheet before procurement. Confirm that the application environment aligns with the specified thermal resistance and maximum junction temperature limits to ensure optimal lifetime and reliability.
Select this component for designs requiring high-speed switching capabilities within the fifth-generation TRENCHSTOP family. Ensure the circuit design accommodates the integrated antiparallel diode characteristics and operates within the recommended voltage and current parameters defined in the datasheet.
This device belongs to the High Speed Switching Series Fifth Generation line from Infineon Technologies. It represents an evolution in IGBT technology designed to provide best-in-class efficiency for industrial power control applications operating at mid to high frequencies.
Consult the official Infineon product selection guide or datasheet for verified substitute part numbers. Do not assume cross-compatibility with other packages or series without verifying electrical and thermal specifications.