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The IKP39N65ES5 is a high-speed switching IGBT from the TRENCHSTOP™ 5 series, copacked with a full-rated current RAPID 1 fast and soft anti-parallel diode. It features a 650V breakdown voltage and operates at a maximum junction temperature of 175°C. The device utilizes S5 technology for smooth switching in both hard and soft applications, offering low VCEsat and low gate charge (QG). Key electrical parameters include a collector-emitter saturation voltage of 1.45V at 25°C and a DC collector current of 39A at Tc=100°C. It is housed in a PG-TO220-3 package.
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the application environment remains within the specified industrial qualification limits defined by JEDEC tests. Ensure thermal management designs account for the maximum junction temperature rating of 175°C to maintain reliability.
Select this component for industrial power conversion circuits requiring high-speed switching capabilities. The integrated RAPID 1 diode simplifies design by eliminating the need for external freewheeling diodes. Consider the PG-TO220-3 package constraints for PCB layout and mounting torque requirements when designing the mechanical assembly.
This device belongs to the TRENCHSTOP™ 5 generation of IGBTs from Infineon Technologies. It is designed specifically for industrial applications where high efficiency and robust performance are critical. The product spectrum includes PSpice models for simulation purposes.
Consult official Infineon cross-reference documents for verified substitutes. No direct public substitute part numbers are confirmed in the provided datasheet.