IKP39N65ES5XKSA1

IKP39N65ES5XKSA1

$3.72
  • Description:IGBT TRENCH FS 650V 62A TO220-3
  • Series:TrenchStop™ 5

SKU:cf41a7ec2d42 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 62A TO220-3
  • Series:TrenchStop™ 5
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):62 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:1.85V @ 15V, 39A
  • Power - Max:188 W
  • Switching Energy:800µJ (on), 500µJ (off)
  • Input Type:Standard
  • Gate Charge:70 nC
  • Td (on/off) @ 25°C:20ns/120ns
  • Test Condition:400V, 39A, 12.8Ohm, 15V
  • Reverse Recovery Time (trr):84 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:PG-TO220-3
  • Grade:-
  • Qualification:-

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IKP39N65ES5XKSA1

Overview

The IKP39N65ES5 is a high-speed switching IGBT from the TRENCHSTOP™ 5 series, copacked with a full-rated current RAPID 1 fast and soft anti-parallel diode. It features a 650V breakdown voltage and operates at a maximum junction temperature of 175°C. The device utilizes S5 technology for smooth switching in both hard and soft applications, offering low VCEsat and low gate charge (QG). Key electrical parameters include a collector-emitter saturation voltage of 1.45V at 25°C and a DC collector current of 39A at Tc=100°C. It is housed in a PG-TO220-3 package.

Feature Summary

  • High-speed S5 technology enabling smooth switching for both hard and soft switching applications
  • Integrated full-rated current RAPID 1 fast and soft anti-parallel diode
  • Low collector-emitter saturation voltage (VCEsat) and low gate charge (QG)
  • Qualified for industrial applications according to JEDEC standards

Applications

  • Industrial Power Supplies
  • Metal Treatment
  • Energy Distribution

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the application environment remains within the specified industrial qualification limits defined by JEDEC tests. Ensure thermal management designs account for the maximum junction temperature rating of 175°C to maintain reliability.

Selection Notes

Select this component for industrial power conversion circuits requiring high-speed switching capabilities. The integrated RAPID 1 diode simplifies design by eliminating the need for external freewheeling diodes. Consider the PG-TO220-3 package constraints for PCB layout and mounting torque requirements when designing the mechanical assembly.

Part Context

This device belongs to the TRENCHSTOP™ 5 generation of IGBTs from Infineon Technologies. It is designed specifically for industrial applications where high efficiency and robust performance are critical. The product spectrum includes PSpice models for simulation purposes.

Replacement Considerations

Consult official Infineon cross-reference documents for verified substitutes. No direct public substitute part numbers are confirmed in the provided datasheet.

IKP39N65ES5XKSA1IKP39N65ES5XKSA1
$3.72
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