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The IKP40N65H5XKSA1 is a high-speed IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a 650V breakdown voltage and operates up to a maximum junction temperature of 175°C. The device offers low gate charge (95 nC) and a collector-emitter saturation voltage of 1.65 V at 25°C. It is designed for mid-to-high range switching frequency converters.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and compliance status. Confirm current production status as datasheets may indicate obsolescence or lifecycle changes. Ensure thermal management aligns with the specified junction temperature limits.
Select this component for designs requiring high-speed switching capabilities within the 650V class. Consider the integrated antiparallel diode characteristics for resonant topologies. Verify that the PG-TO220-3 package fits the mechanical constraints and thermal requirements of the application.
This part belongs to the High-speed 5 IGBT series utilizing TRENCHSTOP™ 5 technology. It serves as a plug-and-play replacement for previous generation IGBTs while offering improved efficiency metrics. The product spectrum includes PSpice models for simulation purposes.
Officially documented as a plug-and-play replacement for previous generation IGBTs. No specific substitute part numbers are listed in the provided datasheet.