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The IKQ140N120CH7 is a high-speed 1200 V TRENCHSTOP™ IGBT 7 Technology device co-packed with a full-rated-current, soft-commutating, ultra-fast recovery emitter-controlled diode. It features a collector-emitter voltage of 1200 V and a DC collector current of 140 A at 25°C case temperature. The saturation voltage is 1.7 V at 25°C. Operating junction temperature ranges from -40°C to 175°C. It utilizes a PG-TO247-3-PLUS package.
Verify the exact part number suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the application environment does not exceed the maximum ratings defined in the datasheet. Ensure compliance with JEDEC standards for industrial applications as validated by the manufacturer.
Select this component for high-efficiency, high-speed hard switching topologies requiring robust thermal performance. The positive temperature coefficient facilitates easy paralleling for higher current applications. Verify gate drive requirements align with the specified threshold voltages and charge characteristics.
This device belongs to the TRENCHSTOP™ IGBT 7 family, designed for advanced power conversion needs. It integrates an emitter-controlled diode to minimize reverse recovery losses. The product is qualified for industrial applications according to relevant JEDEC tests, ensuring reliability in demanding environments.
Consult official Infineon replacement guides for direct substitutes within the IGBT7 series. Verify pinout compatibility and thermal resistance values when considering alternative packages or voltage ratings.
No, this product is not qualified according to the AEC-Q100 or AEC-Q101 documents of the Automotive Electronics Council.
The maximum operating junction temperature (Tvjmax) is 175°C.
Yes, it offers easy paralleling capability due to the positive temperature coefficient in VCEsat.