IKQ50N120CH7XKSA1

Overview

The IKQ50N120CH7XKSA1 is a high-speed 1200 V TRENCHSTOP™ IGBT 7 Technology device co-packed with a full rated current, soft-commutating, ultra-fast recovery emitter controlled 7 Rapid diode. It features a collector-emitter voltage of 1200 V and a DC collector current of 50 A at 25°C (limited by bondwire). The maximum junction temperature is 175°C. At Tvj = 25°C, the saturation voltage is 1.7 V. The package is TO-247PLUS – 3Pin.

Feature Summary

• Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode
• Optimized for high efficiency in high speed hard switching topologies such as 2-L inverter and 3-L NPC T-type
• Easy paralleling capability due to positive temperature coefficient in VCEsat

Applications

• Industrial UPS
• EV-Charging
• String inverter
• Welding

Procurement Notes

Verify the exact ordering suffix against Infineon's official documentation to ensure correct packaging and marking specifications. Confirm that the component meets industrial application requirements per JEDEC standards. Ensure compatibility with the intended thermal management solution given the specified power dissipation limits.

Selection Notes

Select this component for designs requiring high efficiency in high-speed hard switching applications. Consider the positive temperature coefficient for parallel operation needs. Evaluate the specific switching energy losses against the system's thermal constraints and required switching frequencies.

Part Context

This part belongs to the TRENCHSTOP™ IGBT 7 family from Infineon Technologies. It utilizes advanced trench gate technology to achieve superior switching performance compared to previous generations. The device integrates an IGBT and a fast recovery diode in a single package for compact power conversion solutions.

Replacement Considerations

IKQ50N120CH7