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The IKQ75N120CT2XKSA1 is a single IGBT with an anti-parallel diode in the PG-TO247-3-46 package. It features TRENCHSTOP™ 2 technology, offering a collector-emitter voltage of 1200 V and a continuous collector current of 150 A at 25°C. The saturation voltage is 1.75 V at 75 A. It supports a maximum junction temperature of 175°C and includes a short-circuit withstand time of 10 µs.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Confirm that the component meets all relevant JEDEC qualification tests required for your industrial application environment before finalizing procurement.
Select this component for high-power switching applications requiring robust short-circuit withstand capabilities and low conduction losses. Ensure thermal management design accommodates the specified power dissipation limits at the intended case temperatures.
This part belongs to the TRENCHSTOP™ 2 second-generation IGBT family from Infineon Technologies. It is designed as a discrete power switch suitable for demanding industrial environments where reliability and efficiency are critical parameters.
Check datasheets for alternative models within the same voltage and current ratings. Verify pinout compatibility and thermal resistance values when substituting with other manufacturers' components.
The device has a short-circuit withstand time of 10 µs at a junction temperature of 175°C.
No, this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.