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The IKQB200N75CP2AKSA1 is a short circuit rugged 750 V EDT2 IGBT in a reflow-solderable package co-packed with a soft and fast recovery diode. It features a collector-emitter voltage of 750 V, a DC collector current of 200 A at Tc=25°C, and a low saturation voltage of 1.4 V typ. The device supports a pulsed collector current of 600 A and offers a short-circuit withstand time of 3 µs. Operating junction temperature ranges from -40 °C to +175 °C. The package backside is suitable for reflow soldering at 245 °C, three times, and the pin plating enables electrical resistance welding.
Verify the specific suffix AKSA1 against official documentation to confirm exact marking and packaging details. Confirm JEDEC qualification status for industrial applications as specified in the datasheet. Ensure compliance with maximum ratings to maintain reliability.
Select this component for industrial applications requiring high short-circuit ruggedness and low conduction losses. Verify that the operating frequency remains within the 10 kHz optimization limit. Check thermal management requirements against the provided thermal resistance values.
This part belongs to the IKQBXN75CP2 series of EDT2 IGBTs. It utilizes Infineon's advanced trench gate technology to achieve low saturation voltage and efficient switching performance in a robust discrete package designed for industrial power electronics.
Public confirmed substitute part numbers are not available in the provided source material.