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The IKU06N60RBKMA1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing Trenchstop technology. It features a PG-TO251-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 12 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.65 V and a power dissipation rating of 100 W. The component operates within a temperature range of -40°C to +175°C, with a gate-emitter voltage limit of ±20 V.
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape/reel specifications. Confirm RoHS compliance status via the manufacturer's environmental product declaration. Cross-reference the datasheet revision date to validate parameter accuracy before integration into design files.
Select this component for designs requiring a 600V rated single IGBT with through-hole compatibility. The 12A current rating and 100W dissipation capability suit moderate power levels. Ensure thermal management strategies align with the TO251-3 package constraints and the specified junction temperature limits.
This part belongs to the Trenchstop family of IGBTs, characterized by advanced trench gate technology. It serves as a discrete switching solution within Infineon's broader portfolio of power semiconductors, targeting cost-effective applications where through-hole mounting is preferred over surface-mount alternatives.
Public confirmed substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference guides for verified replacements.