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The IKW08T120FKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and features a TO-247-3 through-hole package. The device supports a collector-emitter voltage of 1200 V and a continuous collector current of 16 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V, a maximum power dissipation of 70 W, and a gate-emitter voltage range of -20 V to +20 V. It operates within a temperature range of -40°C to +150°C.
Verify the specific suffix FKSA1 to confirm the tube packaging format and automotive qualification status. Ensure the procurement channel provides valid traceability documentation. Cross-reference the manufacturer part number against official Infineon databases to avoid counterfeit components. Confirm RoHS compliance details if required by local regulations.
Select this component when a 1200 V rating is necessary for high-voltage isolation. The 16 A current capacity suits moderate-power industrial loads. Consider the TO-247-3 footprint for existing board layouts. Evaluate the 2.2 V saturation voltage against system efficiency requirements compared to lower-voltage alternatives.
This IGBT belongs to the general-purpose transistor category from Infineon Technologies. It is distinct from the CoolMOS MOSFETs and other Trenchstop series IGBTs listed in related data. The part serves as a discrete switching element rather than an integrated module or driver IC.
Public confirmed substitute part numbers are not available in the provided source material.