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The IKW15N120CS7XKSA1 is a short-circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology device copacked with a soft and fast recovery Emitter Controlled 7 diode. It features a collector current of 15 A, a saturation voltage of 2.0 V at Tvj=175 °C, and an 8 µsec short circuit withstand time. The component is optimized for hard switching topologies including 2-L inverters and 3-L NPC T-type configurations.
Verify the exact ordering suffix against official Infineon documentation to confirm package type and specific variant details. Ensure compliance with JEDEC47/20/22 industrial application validation standards before integration into final designs.
Select this component for applications requiring robust short-circuit protection up to 8 microseconds. The integrated diode characteristics support efficient operation in hard switching environments without requiring external freewheeling components.
This discrete power semiconductor belongs to the TRENCHSTOP™ IGBT 7 family manufactured by Infineon Technologies. It utilizes advanced silicon technology designed to provide high efficiency and reliability in demanding industrial power conversion scenarios.
No public confirmed substitute part numbers are available in the provided datasheet or source material.