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The IKW15N120T2FKSA1 is a TrenchStop® 2nd generation IGBT with an integrated anti-parallel Emitter Controlled Diode, housed in a PG-TO-247-3 package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 15 A at 110°C case temperature. The device exhibits a saturation voltage of 1.75 V at 25°C and supports a short circuit withstand time of 10 µs.
Verify the specific suffix 'KSA1' against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure the ordering code matches the exact PG-TO-247-3 package variant required for your thermal design constraints.
Select this component for applications requiring robust performance at 1200 V with moderate current ratings. The integrated diode simplifies circuit topology by eliminating external freewheeling requirements. Consider the 10 µs short circuit withstand time for protection scheme design.
This part belongs to the TrenchStop® 2nd generation Series, designed for 1200 V applications. It offers tight parameter distribution and low gate charge characteristics compared to previous generations, optimizing efficiency in power conversion systems.
Consult official Infineon cross-reference lists for verified substitutes. Do not assume pin-compatible replacements without verifying electrical parameters and thermal resistance specifications.
The device supports a short circuit withstand time of 10 µs under specified conditions (VGE = 15V, VCC ≤ 600V).
Yes, it includes a soft, fast recovery anti-parallel Emitter Controlled Diode.
The operating junction temperature range is -40°C to +175°C.