IKW25N120H3FKSA1

$6.21

Description：IGBT TRENCH FS 1200V 50A TO247-3
Series：TrenchStop®

SKU:95ae49fc01d6 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 50A TO247-3
Series：TrenchStop®
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：100 A
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 25A
Power - Max：326 W
Switching Energy：2.65mJ
Input Type：Standard
Gate Charge：115 nC
Td (on/off) @ 25°C：27ns/277ns
Test Condition：600V, 25A, 23Ohm, 15V
Reverse Recovery Time (trr)：290 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-1
Grade：-
Qualification：-

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IKW25N120H3FKSA1

Overview

The IKW25N120H3FKSA1 is a single IGBT in Trench and Fieldstop technology with an integrated antiparallel diode, housed in a PG-TO247-3 package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C case temperature. The device supports a maximum junction temperature of 175°C and offers low saturation voltage and switching energy. Key electrical parameters include a gate charge of 115 nC, turn-on energy of 1.8 mJ, and turn-off energy of 0.85 mJ at 25°C.

Feature Summary

Utilizes Trench and Fieldstop technology for optimized performance
Features very soft, fast recovery antiparallel diode
Designed for low electromagnetic interference (EMI)
Qualified according to JEDEC standards

Applications

Uninterruptible power supplies
Welding converters
Converters with high switching frequency

Procurement Notes

Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure that the component meets all relevant safety and environmental regulations required for the intended industrial application before finalizing procurement orders.

Selection Notes

Select this component for applications requiring robust short-circuit withstand capability and high thermal stability up to 175°C. Consider the internal emitter inductance and switching characteristics when designing gate drive circuits to optimize performance and minimize EMI in high-frequency converter designs.

Part Context

This part belongs to the IKW25N120H3 series from Infineon Technologies, utilizing High Speed DuoPack architecture. It is designed as a standalone discrete semiconductor device within the TRENCHSTOP™ product family, specifically engineered for high-power industrial switching applications.