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The IKW30N65ES5XKSA1 is a TRENCHSTOP™ 5 high-speed soft-switching IGBT co-packaged with a full current-rated RAPID 1 fast and soft antiparallel diode. It features a collector-emitter voltage of 650 V, a continuous collector current of 62 A at 25°C, and a maximum junction temperature of 175°C. The device offers a low saturation voltage of 1.35 V at nominal current and a gate charge of 70 nC. Packaged in a PG-TO247-3 through-hole configuration, it provides optimized thermal resistance for power electronics applications.
Verify the specific ordering suffix against Infineon's official documentation to confirm package type and compliance status. Ensure that the procurement channel sources genuine components directly from authorized distributors or the manufacturer to prevent counterfeit products. Confirm RoHS compliance and Pb-free lead plating specifications match project requirements before finalizing orders.
Select this component for designs requiring integrated fast recovery diodes within a TO-247 footprint. The 650V rating suits general industrial and consumer power supplies. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance values. Consider the soft-switching characteristics when designing resonant or high-frequency circuits to optimize overall system efficiency.
This part belongs to the Infineon TRENCHSTOP™ 5 family, which utilizes advanced trench gate technology. The series is engineered to provide plug-and-play replacements for previous generation IGBTs while offering improved switching performance. The integration of the RAPID 1 diode simplifies circuit design by eliminating the need for external freewheeling diodes in many configurations.
Officially documented as a plug-and-play replacement for previous generation IGBTs. Verify pinout compatibility and thermal characteristics when substituting older models. No specific alternative part numbers are confirmed in the provided datasheet.