IKW30N65NL5XKSA1

Description：IGBT 650V 85A TO247-3
Series：TrenchStop™ 5

SKU:95b08fc81ddb Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 650V 85A TO247-3
Series：TrenchStop™ 5
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：85 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 30A
Power - Max：227 W
Switching Energy：560µJ (on), 1.35mJ (off)
Input Type：Standard
Gate Charge：168 nC
Td (on/off) @ 25°C：59ns/283ns
Test Condition：400V, 30A, 23Ohm, 15V
Reverse Recovery Time (trr)：59 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IKW30N65NL5XKSA1

Overview

The IKW30N65NL5 is a Low-VCE(sat) IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 2 fast and soft antiparallel diode. It features a 650V breakdown voltage and operates up to a maximum junction temperature of 175°C. The device offers very low collector-emitter saturation voltage (1.05V at 30A) and optimized switching losses. Packaged in PG-TO247-3, it supports continuous collector currents of 85A at 25°C and includes Pb-free lead plating compliant with RoHS standards.

Feature Summary

Integrates a Low-VCE(sat) IGBT with a RAPID 2 fast and soft antiparallel diode for optimized performance.
Provides best-in-class tradeoff between conduction and switching losses within the fifth generation technology.
Features low gate charge (QG) to facilitate efficient driver design and reduced switching energy.

Applications

Uninterruptible power supplies
Solar photovoltaic inverters
Welding machines

Procurement Notes

Verify the exact part number suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the application environment remains within the specified thermal limits and does not exceed the maximum ratings defined in the datasheet to guarantee long-term reliability.

Selection Notes

Select this component for applications requiring high efficiency and robust reverse recovery characteristics. The integrated RAPID 2 diode minimizes electromagnetic interference during commutation. Ensure the gate drive circuitry accommodates the specific switching energy requirements and thermal resistance values provided in the electrical characteristics section.

Part Context

This component belongs to the TRENCHSTOP™ 5 series, designed for industrial power control. It utilizes advanced trench field-stop technology to achieve superior performance compared to previous generations. The package integrates both the N-channel IGBT and the antiparallel diode into a single TO-247-3 housing for compact system design.