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The IKW30N65WR5XKSA1 is a reverse-conducting IGBT with a monolithic body diode, utilizing TRENCHSTOP™ 5 technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 60 A at 25°C. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a saturation voltage of 1.4 V at 30 A and a gate charge of 155 nC. It is housed in a PG-TO247-3 package.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the component matches the required thermal resistance values for your heat sink design before finalizing orders.
Select this component for designs requiring integrated freewheeling functionality to reduce circuit complexity. Consider the 60 A continuous current rating and 185 W power dissipation capabilities for appropriate thermal management. Evaluate the switching energy losses and reverse recovery characteristics to ensure compatibility with the target converter topology and frequency requirements.
This part belongs to the Reverse-Conducting Series from Infineon Technologies. It integrates an N-channel IGBT and a diode into a single monolithic structure. The device is designed for industrial power control applications where space efficiency and reduced parasitic inductance are critical performance factors.
Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains the same PG-TO247-3 footprint and pinout configuration. Verify that alternative devices meet the 650 V breakdown voltage and similar thermal resistance specifications.