IKW40N65RH5XKSA1

Overview

The IKW40N65RH5XKSA1 is a CoolSiC hybrid discrete IGBT from the TRENCHSTOP 5 H5 family, co-packed with a half-rated 6th generation CoolSiC diode. It features a collector-emitter voltage of 650 V and a continuous collector current of 74 A at 25°C case temperature. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a typical saturation voltage of 1.65 V, a gate charge of 95 nC, and a maximum power dissipation of 250 W at 25°C. Switching losses are minimized through the integration of silicon carbide technology.

Feature Summary

• Combines TRENCHSTOP 5 IGBT with a half-rated 6th generation CoolSiC diode for ultra-low switching losses.
• Delivers benchmark efficiency in hard switching topologies compared to pure silicon devices.
• Designed as a plug-and-play replacement for existing silicon-based discrete components.
• Qualified according to JEDEC standards for target industrial applications.

Applications

• Industrial SMPS
• Industrial UPS
• Solar string inverter
• Energy storage systems
• Chargers

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct package and marking specifications. Confirm that the component meets all necessary environmental compliance requirements for the intended deployment. Cross-reference the datasheet revision history to ensure access to the most recent technical data and testing conditions before finalizing procurement decisions.

Selection Notes

Select this component when high-frequency operation and reduced thermal stress are required in single-switch configurations. The integrated CoolSiC diode significantly lowers reverse recovery losses, making it suitable for demanding hard-switching environments. Ensure the application design accounts for the specific thermal resistance values and maximum pulse current limitations defined in the official characteristic diagrams.

Part Context

This part belongs to the TRENCHSTOP 5 H5 product line, representing Infineon's hybrid discrete strategy. It merges advanced trench field-stop IGBT technology with silicon carbide Schottky diodes. This combination targets high-efficiency power conversion needs in industrial sectors where traditional silicon solutions face efficiency and thermal limitations.

Replacement Considerations

Officially documented substitutes include IKZA40N65RH5XKSA1 and IKW75N65RH5XKSA1. Verify pin compatibility and thermal characteristics when transitioning between these variants to maintain circuit integrity.

FAQ

What is the internal emitter inductance value?

The internal emitter inductance (LE) is measured at 13.0 nH, taken 5 mm from the case.

How does the CoolSiC diode affect switching performance?

The integrated half-rated 6th generation CoolSiC diode provides ultra-low switching losses, particularly by minimizing reverse recovery charge compared to standard silicon diodes.

Is this component qualified for automotive use?

No, the product is not qualified according to AEC-Q100 or AEC-Q101 documents of the Automotive Electronics Council.