IKW40N65WR5XKSA1

$3.43

Description：IGBT TRENCH 650V 80A TO247-3
Series：TrenchStop™

SKU:fa0a3e487bf2 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 650V 80A TO247-3
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 40A
Power - Max：230 W
Switching Energy：770µJ (on), 160µJ (off)
Input Type：Standard
Gate Charge：193 nC
Td (on/off) @ 25°C：42ns/432ns
Test Condition：400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr)：112 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IKW40N65WR5XKSA1

Overview

The IKW40N65WR5XKSA1 is a Reverse-Conducting IGBT from Infineon Technologies, featuring a monolithic body diode in a PG-TO247-3 package. It supports a collector-emitter voltage of 650 V and a continuous DC collector current of 80 A at 25°C case temperature. The device exhibits a typical saturation voltage of 1.4 V and a gate charge of 193 nC. Operating junction temperatures range from -40°C to 175°C.

Feature Summary

Features a powerful monolithic diode optimized for Zero Current Switching (ZCS) applications
Provides easy paralleling capability due to the positive temperature coefficient in VCEsat
Ensures high ruggedness with stable behavior across varying temperatures
Designed for low electromagnetic interference (EMI) generation

Applications

Welding equipment
Power Factor Correction (PFC)
Zero Current Switching (ZCS) converters

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific ordering suffix matches the required package and marking specifications. Ensure compliance with RoHS standards and Pb-free lead plating requirements as stated in the official documentation before finalizing procurement orders.

Selection Notes

Select this component for designs requiring integrated reverse-conduction without external diodes. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance values. Consider the positive temperature coefficient for parallel operation stability. Verify that the switching frequency and voltage ratings align with the target application's electrical demands.

Part Context

This part belongs to the TRENCHSTOP™ WR5 series of Reverse-Conducting IGBTs. It integrates an IGBT switch and a diode within a single silicon die. The technology focuses on reducing switching losses and improving efficiency in resonant converter topologies compared to standard discrete configurations.