SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IKW50N60DTPXKSA1 is a TRENCHSTOP Performance series IGBT copacked with a RAPID 1 fast anti-parallel diode. It features a PG-TO247-3 package and supports a maximum junction temperature of 175°C. Key electrical parameters include a collector-emitter voltage (VCE) of 600 V, a continuous collector current (IC) of 80 A at 25°C, and a saturation voltage (VCEsat) of 1.6 V at 25°C. The device exhibits a total switching energy (Ets) of 2.38 mJ at 25°C and 3.64 mJ at 175°C.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and compliance details. Ensure the component matches the required PG-TO247-3 form factor and that the manufacturer source is an authorized distributor or the original equipment manufacturer.
Select this component for industrial power control applications requiring high-speed switching capabilities within the TRENCHSTOP Performance series. Consider the thermal resistance characteristics and the integrated diode performance when designing circuits for drives and solar inverters.
This part belongs to the TRENCHSTOP Performance series, utilizing Trench and Fieldstop technology. It is designed as a high-speed IGBT specifically intended for industrial power control environments where efficiency and switching speed are critical operational requirements.
Consult official Infineon cross-reference documents for verified substitutes. Do not assume compatibility based on similar voltage ratings alone; verify gate charge and thermal specifications.