IKW50N60TAFKSA1

Overview

The IKW50N60TAFKSA1 is a single IGBT with an integrated anti-parallel diode from the TRENCHSTOP™ series. It features a collector-emitter voltage of 600 V and a continuous collector current of 50 A at 25°C, rising to 80 A under specific thermal conditions. The device operates within a junction temperature range of -40°C to +175°C and utilizes a PG-TO247-3 package.

Feature Summary

• Utilizes TRENCHSTOP™ and Fieldstop technology for high switching speed and tight parameter distribution.
• Features a very soft, fast recovery anti-parallel Emitter Controlled HE diode.
• Provides positive temperature coefficient in VCE(sat) for stable parallel operation.
• Designed for low electromagnetic interference (EMI) and low gate charge.

Applications

• Frequency converters
• Uninterrupted power supplies

Procurement Notes

Verify the exact suffix 'FKSA1' against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure the ordering part number matches the specific tape-and-reel or tube packaging configuration required for your assembly process. Cross-reference the datasheet revision date to ensure all electrical characteristics align with your design specifications.

Selection Notes

Select this component for applications requiring robust short-circuit withstand capability up to 5 microseconds. The device offers a balance of low saturation voltage and optimized switching losses suitable for mid-power conversion systems. Consider the thermal resistance values when designing heatsinking solutions to maintain junction temperatures within safe operating limits during peak load conditions.

Part Context

This device belongs to the TRENCHSTOP™ Series q, representing Infineon's silicon IGBT technology platform. It integrates advanced trench gate structures with field-stop layers to enhance performance over previous generations. The product line is engineered for reliability in industrial power electronics, offering consistent electrical parameters across manufacturing batches.

Replacement Considerations

Consult official Infineon substitution guides for compatible alternatives. Verify pinout compatibility and thermal interface requirements before replacing existing components in established designs.

FAQ

What is the maximum short-circuit withstand time for this IGBT?

The device supports a short-circuit withstand time of 5 microseconds under specified conditions of VGE = 15V and VCC ≤ 400V.

Does the IKW50N60T include an integrated freewheeling diode?

Yes, it features an integrated anti-parallel Emitter Controlled HE diode with soft and fast recovery characteristics.

What is the typical collector-emitter saturation voltage at 25°C?

The typical VCE(sat) is 1.5 V when measured at IC = 50 A and VGE = 15 V.