IKW50N65EH5XKSA1

$4.66

Description：IGBT TRENCH 650V 80A TO247-3
Series：TrenchStop™

SKU:bfcb2fdd75dd Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 650V 80A TO247-3
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
Power - Max：275 W
Switching Energy：1.5mJ (on), 500µJ (off)
Input Type：Standard
Gate Charge：120 nC
Td (on/off) @ 25°C：25ns/172ns
Test Condition：400V, 50A, 12Ohm, 15V
Reverse Recovery Time (trr)：81 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IKW50N65EH5XKSA1

Overview

The IKW50N65EH5XKSA1 is a high-speed IGBT in TRENCHSTOP™ 5 technology, co-packed with a full-rated RAPID 1 fast and soft antiparallel diode. It features a collector-emitter voltage of 650 V and a DC collector current of 80 A at 25°C (50 A at 100°C). The device has a maximum junction temperature of 175°C, a gate charge of 120 nC, and a power dissipation of 275 W at 25°C case temperature. It utilizes a PG-TO247-3 package.

Feature Summary

TRENCHSTOP™ 5 technology optimized for hard switching and resonant topologies
Co-packaged with full-rated RAPID 1 fast and soft antiparallel diode
Low gate charge for improved efficiency
Qualified according to JEDEC standards

Applications

Uninterruptible power supplies
Solar converters
Welding converters
Mid to high range switching frequency converters

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Ensure compatibility with RoHS compliance requirements and lead-free plating standards before procurement. Confirm that the component meets the target application's thermal and electrical constraints as defined in the datasheet.

Selection Notes

Select this component for applications requiring high efficiency in hard switching or resonant topologies. Consider the integrated RAPID 1 diode for simplified circuit design. Evaluate thermal management needs based on the specified power dissipation and junction temperature limits. Ensure the operating voltage does not exceed the 650 V breakdown rating.

Part Context

This part belongs to the Infineon TRENCHSTOP™ 5 family of IGBTs. It is designed to replace previous generation IGBTs in various industrial power conversion applications. The integration of the anti-parallel diode reduces system complexity and improves overall performance compared to discrete solutions.

Replacement Considerations

Officially documented as a plug-and-play replacement for previous generation IGBTs. Verify pinout and thermal characteristics when substituting older models.