SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IKW50N65F5AXKSA1 is a high-speed IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a 650V breakdown voltage and operates up to a maximum junction temperature of 175°C. The device provides an 80A DC collector current at 25°C case temperature and a 150A pulsed collector current. Key electrical parameters include a VCEsat of 1.66V at 25°C and a gate charge (QG) of 108nC.
Verify the specific ordering suffix 'XKSA1' against official Infineon documentation to confirm tape-and-reel packaging or specific marking variations. Ensure the component meets all required environmental compliance standards such as RoHS before finalizing procurement specifications.
Select this component for applications requiring high switching speeds and low energy losses. The integrated antiparallel diode simplifies circuit design by eliminating the need for external freewheeling diodes. Consider thermal management requirements given the 175°C maximum junction temperature capability.
This part belongs to the TRENCHSTOP™ 5 family, representing the fifth generation of Infineon's IGBT technology. It is designed for industrial power control applications where high efficiency and reliability are critical. The PG-TO247-3 package facilitates through-hole mounting.
IKW50N65F5FKSA1