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The IKW50N65F5FKSA1 is a high-speed IGBT in TRENCHSTOP 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The saturation voltage is 1.6 V at 50 A. Switching energy losses are 0.49 mJ (turn-on) and 0.16 mJ (turn-off). The device operates up to a maximum junction temperature of 175°C and uses a PG-TO247-3 package.
Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure the component matches the exact datasheet revision required for your design specifications. Cross-reference the manufacturer part number with authorized distributors to prevent counterfeit components.
Select this component for designs requiring high-speed switching capabilities within the TRENCHSTOP 5 family. Consider the integrated antiparallel diode characteristics when designing resonant or hard-switched circuits. Evaluate thermal management requirements based on the specified power dissipation limits and thermal resistance values provided in the datasheet.
This component belongs to the TRENCHSTOP 5 series of IGBTs from Infineon Technologies. It represents the fifth generation of high-speed switching technology designed for industrial power control applications. The product line includes various voltage and current ratings tailored for different converter architectures.
Consult official Infineon documentation for verified substitute part numbers. Do not assume compatibility with other manufacturers' devices without thorough electrical and thermal validation.