IKW50N65SS5XKSA1

Overview

The IKW50N65SS5 is a CoolSiC hybrid discrete IGBT from the TRENCHSTOP 5 S5 family, co-packed with a full-rated 6th generation CoolSiC diode. It features a collector-emitter voltage of 650 V and a DC collector current of 80 A at 25°C case temperature. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a maximum power dissipation of 274 W at 25°C, a typical collector-emitter saturation voltage of 1.35 V, and a gate charge of 110 nC. The integrated diode supports a forward current of 57.5 A at 25°C.

Feature Summary

• Combines TRENCHSTOP 5 IGBT technology with a full-rated 6th generation CoolSiC diode for ultra-low switching losses.
• Delivers benchmark efficiency in hard switching topologies through optimized silicon carbide integration.
• Provides very low on-state losses and serves as a plug-and-play replacement for pure silicon devices.
• Qualified according to JEDEC standards for target industrial applications.

Applications

• Industrial Switched-Mode Power Supplies (SMPS)
• Industrial Uninterruptible Power Supplies (UPS)
• Solar string inverters
• Energy storage systems
• Chargers

Procurement Notes

Verify component authenticity by checking the marking code K50ESS5 against official Infineon documentation. Confirm the package type is PG-TO247-3 and ensure the part number matches the specific datasheet revision. Validate that the product meets RoHS compliance and Pb-free lead plating requirements before integration into designs.

Selection Notes

Select this component when high-frequency hard switching performance is required alongside robust thermal management capabilities. The integrated CoolSiC diode eliminates the need for external anti-parallel diodes, simplifying circuit layout. Ensure the application design accommodates the 175°C maximum junction temperature rating for optimal reliability and lifetime under varying load conditions.

Part Context

This device belongs to the TRENCHSTOP 5 S5 product line, representing Infineon's hybrid discrete solutions. It integrates advanced silicon IGBT structures with silicon carbide Schottky diodes to enhance system efficiency. The TO-247-3 package facilitates efficient heat transfer and straightforward mounting in industrial power conversion modules.

Replacement Considerations

The datasheet identifies this component as a plug-and-play replacement for pure silicon devices. No specific alternative part numbers are listed in the provided documentation.

FAQ

What is the internal emitter inductance value?

The internal emitter inductance is measured at 13 nH, taken 5 mm from the case.

Is this component qualified for automotive applications?

No, the product is not qualified according to AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.

What is the transient gate-emitter voltage limit?

The transient gate-emitter voltage can reach ±30 V for pulse widths up to 10 µs with a duty cycle less than 0.01.