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The IKW75N65EH5XKSA1 is a single N-channel IGBT in the TRENCHSTOP™ 5 series, utilizing high-speed H5 technology. It features a 650 V collector-emitter voltage and a continuous collector current of 90 A at 25°C. The device has a maximum collector-emitter saturation voltage of 1.65 V at 25°C and 75 A. It operates within a junction temperature range of -40°C to +175°C and dissipates up to 395 W at 25°C case temperature. The component is housed in a PG-TO247-3 package.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm lead plating and RoHS compliance status. Ensure that the procurement channel provides valid traceability data. Confirm that the component meets the required environmental standards for the intended application before finalizing orders.
Select this component for designs requiring high efficiency in hard switching or resonant topologies. Consider the copackaged RAPID 1 diode for applications needing fast and soft recovery characteristics. Evaluate thermal management requirements based on the specified power dissipation limits and thermal resistance values provided in the datasheet.
This part belongs to the TRENCHSTOP™ 5 family of silicon IGBTs manufactured by Infineon Technologies. It represents a high-speed series designed to offer best-in-class efficiency compared to previous generations. The device is suitable for industrial power conversion applications where reliability and performance are critical.
The datasheet indicates it serves as a plug-and-play replacement for previous generation IGBTs. Verify pinout compatibility and electrical parameters when substituting older models from the same manufacturer.
It is copackaged with a full-rated RAPID 1 fast and soft antiparallel diode.
No, the product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
The maximum mounting torque for an M3 screw is 0.6 Nm.