IKW75N65ET7XKSA1

IKW75N65ET7XKSA1

$4.84
  • Description:IGBT TRENCH FS 650V 80A TO247-3
  • Series:TrenchStop™

SKU:0df4e741c870 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 80A TO247-3
  • Series:TrenchStop™
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):225 A
  • Vce(on) (Max) @ Vge, Ic:1.65V @ 15V, 75A
  • Power - Max:333 W
  • Switching Energy:2.17mJ (on), 1.23mJ (off)
  • Input Type:Standard
  • Gate Charge:435 nC
  • Td (on/off) @ 25°C:28ns/310ns
  • Test Condition:400V, 75A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr):100 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

IKW75N65ET7XKSA1

Overview

The IKW75N65ET7XKSA1 is a low-loss IGBT with an integrated anti-parallel diode, utilizing Trench and Fieldstop technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a maximum saturation voltage of 1.65 V, a gate charge of 435 nC, and a short-circuit withstand time of up to 5 µs. Power dissipation reaches 333 W at 25°C case temperature.

Feature Summary

  • Integrates Trench and Fieldstop technology for optimized switching performance.
  • Features very soft and fast recovery characteristics in the antiparallel diode.
  • Designed to reduce electromagnetic interference (EMI) during operation.
  • Includes a short tail current to minimize turn-off losses.

Applications

  • Servo drives
  • General purpose drives (GPD)
  • Industrial UPS systems
  • Solar string inverters

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and marking details. Ensure that the procurement channel provides valid traceability for industrial-grade components. Confirm RoHS compliance status and Pb-free lead plating specifications prior to finalizing orders.

Selection Notes

Select this component for applications requiring high efficiency and reduced EMI. Consider the thermal resistance values when designing heat sinks for continuous operation. Evaluate the short-circuit capability if the target circuit requires robust fault protection mechanisms.

Part Context

This part belongs to the IGBT 7 family from Infineon Technologies. It is housed in a PG-TO247-3 package. The product is qualified according to JEDEC standards for industrial applications. PSpice models are available for simulation purposes.

Replacement Considerations

Consult official Infineon cross-reference documents for verified substitutes. Do not assume compatibility based on generic pinouts or voltage ratings alone.

FAQ

Is the IKW75N65ET7XKSA1 qualified for automotive applications?

No, the datasheet explicitly states that this product is not qualified according to AEC Q100 or AEC Q101 documents.

What is the maximum short-circuit withstand time?

The device can withstand a short circuit for up to 5 µs under specified conditions.

Does the device include an integrated diode?

Yes, it includes an anti-parallel diode with very soft and fast recovery characteristics.

IKW75N65ET7XKSA1IKW75N65ET7XKSA1
$4.84
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