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The IKW75N65ET7XKSA1 is a low-loss IGBT with an integrated anti-parallel diode, utilizing Trench and Fieldstop technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a maximum saturation voltage of 1.65 V, a gate charge of 435 nC, and a short-circuit withstand time of up to 5 µs. Power dissipation reaches 333 W at 25°C case temperature.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and marking details. Ensure that the procurement channel provides valid traceability for industrial-grade components. Confirm RoHS compliance status and Pb-free lead plating specifications prior to finalizing orders.
Select this component for applications requiring high efficiency and reduced EMI. Consider the thermal resistance values when designing heat sinks for continuous operation. Evaluate the short-circuit capability if the target circuit requires robust fault protection mechanisms.
This part belongs to the IGBT 7 family from Infineon Technologies. It is housed in a PG-TO247-3 package. The product is qualified according to JEDEC standards for industrial applications. PSpice models are available for simulation purposes.
Consult official Infineon cross-reference documents for verified substitutes. Do not assume compatibility based on generic pinouts or voltage ratings alone.
No, the datasheet explicitly states that this product is not qualified according to AEC Q100 or AEC Q101 documents.
The device can withstand a short circuit for up to 5 µs under specified conditions.
Yes, it includes an anti-parallel diode with very soft and fast recovery characteristics.