IKW75N65RH5XKSA1

$8.13

Description：IGBT TRENCH FS 650V 80A TO247-3
Series：TrenchStop™ 5

SKU:6019fdcf0d8e Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO247-3
Series：TrenchStop™ 5
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
Power - Max：395 W
Switching Energy：360µJ (on), 300µJ (off)
Input Type：Standard
Gate Charge：168 nC
Td (on/off) @ 25°C：26ns/180ns
Test Condition：400V, 37.5A, 9Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IKW75N65RH5XKSA1

Overview

The IKW75N65RH5XKSA1 is a CoolSiC™ Hybrid Discrete IGBT from the TRENCHSTOP™ 5 H5 family, co-packed with a half-rated 6th generation CoolSiC™ diode. It features a collector-emitter voltage of 650 V and a continuous collector current of 75 A at 100°C (80 A at 25°C). The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a typical saturation voltage of 1.65 V, a gate charge of 168 nC, and a maximum power dissipation of 395 W at 25°C case temperature.

Feature Summary

Combines TRENCHSTOP™ 5 IGBT technology with a half-rated 6th generation CoolSiC™ diode for ultra-low switching losses.
Delivers benchmark efficiency in hard switching topologies.
Designed as a plug-and-play replacement for pure silicon devices.
Qualified according to JEDEC standards for target industrial applications.

Applications

Industrial SMPS
Industrial UPS
Solar string inverter
Energy storage
Charger

Procurement Notes

Verify the specific ordering suffix XKSA1 against the manufacturer's official documentation to confirm package type and compliance details. Confirm the component lifecycle status prior to procurement, as availability may be restricted. Ensure that the intended application environment remains within the specified thermal and electrical limits defined in the datasheet.

Selection Notes

Select this component for designs requiring high-frequency operation up to 100 kHz with reduced switching losses. Evaluate the thermal resistance characteristics to ensure adequate heat sinking for the specified power dissipation. Consider the integrated SiC diode benefits for reverse recovery performance compared to standard silicon alternatives in similar voltage classes.

Part Context

This part belongs to Infineon's TRENCHSTOP™ 5 H5 product line, which integrates Silicon Carbide technology with silicon IGBTs. The TO-247-3 package provides a robust mechanical solution for through-hole mounting. The hybrid architecture aims to improve system efficiency without requiring significant layout changes from traditional silicon-based designs.