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The IKWH30N67PR7XKSA1 is a TRENCHSTOP IGBT 7 PR7 Reverse Conducting IGBT designed for boost PFC stages. It features a collector-emitter voltage of 670 V and a continuous collector current of 71 A at 25°C. The device offers a typical saturation voltage of 1.4 V and operates within a junction temperature range of -40°C to 175°C. Packaged in a PG-TO247-3-U04 with high creepage distance, it integrates an optimized monolithic diode for efficient power conversion.
Verify the specific ordering suffix XKSA1 against the manufacturer's official documentation to ensure correct package variant and compliance status. Confirm that the component meets JEDEC industrial qualification standards required for the target application environment before finalizing procurement orders.
Select this component for designs requiring high switching frequencies and improved electromagnetic interference performance. The integrated reverse conducting diode simplifies circuit topology by eliminating external freewheeling components. Ensure thermal management supports the specified junction temperature limits during operation.
This part belongs to the Infineon TRENCHSTOP IGBT 7 family, representing advanced silicon technology for power electronics. It serves as a reverse conducting IGBT, combining the transistor and diode functions into a single monolithic die to enhance efficiency and reduce system complexity in high-power conversion stages.
Consult official replacement lists for direct pin-compatible alternatives. Verify electrical parameters such as voltage ratings and current capabilities match the original design requirements when considering substitute components.