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The IKWH50N65WR6XKSA1 is a single N-channel IGBT with an integrated monolithic diode, utilizing TRENCHSTOP™ 5 WR6 technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 85 A at 25 °C case temperature. The device operates within a junction temperature range of -40 °C to 175 °C. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.85 V at 25 °C and a typical turn-off energy of 0.73 mJ under standard test conditions.
Verify the exact suffix XKSA1 matches the required RoHS compliance and tape-and-reel or tube packaging specifications. Confirm that the enhanced creepage package variant is necessary for your specific PCB layout requirements. Ensure the component meets industrial qualification standards per JEDEC47/20/22 before finalizing procurement.
Select this component when high reliability in contaminated environments is required due to its enhanced insulation distances. Consider the positive temperature coefficient for thermal stability in parallel configurations. Evaluate the integrated diode characteristics if the application involves hard-switching scenarios like PFC or welding circuits.
This part belongs to Infineon's TRENCHSTOP™ 5 family, specifically the WR6 variant designed for robustness. It differs from standard TO-247 packages by offering superior isolation metrics. The product is intended for industrial applications and is not qualified for automotive use according to AEC Q100/Q101 standards.
Direct substitutes are not explicitly listed in the provided documentation. When replacing, ensure the alternative maintains the 650 V rating, similar current handling, and compatible package dimensions. Verify that any replacement also offers enhanced creepage distances if environmental reliability is a critical design constraint.