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The IKWH60N65WR6XKSA1 is a single N-channel IGBT from Infineon Technologies, utilizing TRENCHSTOP™ 5 WR6 technology in an enhanced PG-TO247-3 package. It features a collector-emitter voltage of 650 V and a continuous collector current of 100 A at 25 °C case temperature. The device includes a monolithic anti-parallel diode optimized for PFC and welding applications. Key electrical parameters include a typical VCEsat of 1.55 V at 25 °C and a maximum operating junction temperature of 175 °C.
Verify the specific ordering suffix to confirm the exact packaging configuration and reel/tube specifications required for your assembly process. Confirm that the component meets JEDEC qualification standards for industrial applications as stated in the datasheet. Ensure compatibility with your thermal management design given the specified power dissipation ratings.
Select this component when high reliability in contaminated environments is required due to its enhanced insulation distances. It is suitable for designs needing low saturation voltage and stable switching characteristics across a wide temperature range. Consider the TO-247-3 package constraints and mounting torque requirements during PCB layout.
This part belongs to the TRENCHSTOP™ 5 family, representing an evolution in silicon gate technology. The WR6 variant specifically addresses environmental robustness by increasing pin-to-pin spacing within the standard TO-247 footprint, distinguishing it from standard commercial variants while maintaining similar electrical performance profiles.
Direct pin-to-pin replacements must match the 650V rating, 100A current capacity, and TO-247-3 package. Verify if alternative models offer comparable creepage/clearance distances if environmental reliability is critical. Check for updated datasheet revisions regarding transient gate-emitter voltage limits.