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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 160A TO247-4
- Series：TRENCHSTOP™
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：160 A
- Current - Collector Pulsed (Icm)：600 A
- Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 150A
- Power - Max：621 W
- Switching Energy：2.3mJ (on), 2.9mJ (off)
- Input Type：Standard
- Gate Charge：300 nC
- Td (on/off) @ 25°C：44ns/343ns
- Test Condition：400V, 150A, 10Ohm, 15V
- Reverse Recovery Time (trr)：65 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：PG-TO247-4-2
- Grade：-
- Qualification：-
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Overview
The IKY150N65EH7XKSA1 is a single IGBT with an integrated anti-parallel diode, utilizing Infineon's TRENCHSTOP™ IGBT7 technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 160 A at 25°C. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.65 V and a gate charge of 300 nC. The component is housed in a PG-TO247-4-PLUS-NN5.1 package.
Feature Summary
- Integrates high-speed IGBT with low saturation voltage and a soft, fast recovery emitter-controlled diode.
- Optimized for hard switching applications in two-level and three-level topologies.
- Provides humidity robustness and smooth switching behavior.
Applications
- Industrial UPS
- EV-Charging
- String inverter
- Welding
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm exact marking and packaging details. Confirm that the application environment does not exceed the absolute maximum ratings specified in the datasheet. Ensure compliance with JEDEC standards for industrial qualification if required by the design specifications.
Selection Notes
Select this component for designs requiring high efficiency in hard-switching environments. The low saturation voltage reduces conduction losses, while optimized switching characteristics minimize dynamic losses. Consider the thermal resistance values when designing the heatsink interface to maintain safe operating temperatures under load.
Part Context
This part belongs to the TRENCHSTOP™ IGBT7 family from Infineon Technologies. It represents a generation of silicon power devices designed to improve energy efficiency in power conversion systems. The series focuses on reducing switching losses and improving reliability compared to previous generations.
Replacement Considerations
Consult official replacement lists or cross-reference guides provided by Infineon Technologies for verified substitute part numbers. Do not assume pin-compatible alternatives without verifying electrical parameters and thermal characteristics.
FAQ
Is this component qualified for automotive applications?
No, the product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
What is the internal emitter inductance value?
The internal emitter inductance is measured at 13 nH, taken 5 mm from the case.
Can this device be used in personal injury-risk applications?
Infineon Technologies explicitly warns that its products may not be used in any applications where failure could reasonably result in personal injury.
