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The IKY50N120CH7 is a high-speed 1200 V TRENCHSTOP™ IGBT 7 Technology device co-packed with a full-rated current, soft-commutating, ultra-fast recovery emitter-controlled diode. It features a collector-emitter voltage of 1200 V and a DC collector current of 50 A at 25°C case temperature. The saturation voltage is 1.7 V at 25°C. Operating junction temperature ranges from -40°C to 175°C. The component utilizes a PG-TO247-4-PLUS-NN5.1 package.
Verify the specific ordering suffix against official Infineon documentation to confirm exact marking and packaging configuration. Ensure compliance with JEDEC qualification standards for industrial applications as specified in the datasheet. Confirm RoHS compliance status prior to procurement.
Select this component for high-efficiency designs requiring optimized performance in high-speed hard switching topologies. Consider the positive temperature coefficient for parallel operation requirements. Evaluate thermal resistance values relative to the intended heat sink design and ambient operating conditions.
This part belongs to the TRENCHSTOP™ IGBT 7 family, representing advanced silicon technology for power conversion. It integrates an anti-parallel diode within a single TO-247PLUS 4-pin package, designed to minimize parasitic inductance and enhance switching speed compared to standard configurations.
IKY50N120CH3XKSA1