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The IKZ50N65NH5XKSA1 is a high-speed IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 2 fast and soft antiparallel diode. It features a 650V breakdown voltage, 85A DC collector current at 25°C, and a maximum junction temperature of 175°C. The device utilizes a Kelvin emitter pin for ultra-low loss switching and offers best-in-class efficiency in hard switching and resonant topologies.
Verify component authenticity by cross-referencing the manufacturer part number and marking code against official Infineon documentation. Confirm that the package type matches the required PG-TO247-4 specification. Ensure that the ordering suffix aligns with the specific packaging requirements defined in the procurement order.
Select this component for designs requiring high switching speeds and low conduction losses. The integrated Kelvin emitter pin minimizes parasitic inductance effects during switching transitions. Consider the thermal resistance values when designing heat sinks to maintain the junction temperature within the recommended operating limits.
This component belongs to the TRENCHSTOP™ 5 series, representing the fifth generation of high-speed IGBT technology from Infineon Technologies. It is designed as a plug-and-play replacement for previous generation IGBTs while providing enhanced performance metrics for modern industrial power control applications.
The datasheet identifies this device as a plug-and-play replacement for previous generation IGBTs. No specific substitute part numbers are documented in the provided source material.
The Kelvin emitter pin enables ultra-low loss switching by separating the gate drive circuit from the main emitter current path, reducing the impact of internal emitter inductance on the gate control signal.
No, the emitter and Kelvin emitter pins are not exchangeable. Their exchange might lead to malfunction of the device.
The maximum junction temperature (Tvjmax) is rated at 175°C.