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The IKZ75N65EL5XKSA1 is a low VCE(sat) IGBT in TRENCHSTOP 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a 650V breakdown voltage, 100A DC collector current at 25°C, and a maximum junction temperature of 175°C. The device utilizes a PG-TO247-4 package for through-hole mounting.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure that procurement channels provide valid datasheet references matching the exact part number to avoid counterfeit components or incorrect revisions.
Select this component for industrial power control applications requiring high efficiency and robust thermal performance. Consider the 175°C maximum junction temperature and the integrated antiparallel diode characteristics when designing circuits for high-frequency switching environments.
This component belongs to the TRENCHSTOP 5 family, specifically the Low VCE(sat) series. It represents the fifth generation of IGBT technology from Infineon Technologies, designed to optimize the balance between conduction losses and switching energy dissipation for improved system efficiency.
Consult official Infineon cross-reference guides for verified substitutes. Generic replacements may not match the specific copackaged diode characteristics or thermal resistance values defined in the original datasheet.