SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IKZ75N65NH5 is a high-speed fifth-generation IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 2 fast and soft antiparallel diode. It features a 650V breakdown voltage and operates up to a maximum junction temperature of 175°C. The device utilizes a Kelvin emitter pin for ultra-low loss switching and offers best-in-class efficiency in hard switching and resonant topologies. Key electrical parameters include a collector-emitter saturation voltage of 1.65V at 25°C and a gate charge of 166nC.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and marking variations. Ensure that the Kelvin emitter pin is correctly identified during PCB layout, as it is not exchangeable with the standard emitter pin. Confirm RoHS compliance and lead plating specifications prior to final procurement decisions.
Select this component for applications requiring high switching frequencies and low conduction losses. The integrated RAPID 2 diode reduces reverse recovery issues compared to standard silicon diodes. Consider the thermal resistance values when designing heat sinks, noting the distinct junction-to-case ratings for the IGBT and diode sections within the single package.
This device belongs to the TRENCHSTOP™ 5 family, representing the high-speed series fifth generation from Infineon Technologies. It is housed in a PG-TO247-4 package, providing robust mechanical stability and efficient thermal management for industrial power control applications.
Officially documented as a plug-and-play replacement for previous generation IGBTs. Verify pinout compatibility, specifically ensuring the Kelvin emitter pin is utilized correctly to avoid malfunction.
No, the emitter and Kelvin emitter pins are not exchangeable. Their exchange might lead to device malfunction.
The maximum operating junction temperature (Tvj) is 175°C.
The IGBT is copacked with a RAPID 2 fast and soft antiparallel diode.