IKZA40N65EH7XKSA1

$5.87

Description：IGBT TRENCH FS 650V 80A TO247-4
Series：TRENCHSTOP™

SKU:06f10c308c6b Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO247-4
Series：TRENCHSTOP™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 40A
Power - Max：210 W
Switching Energy：370µJ (on), 360µJ (off)
Input Type：Standard
Gate Charge：81 nC
Td (on/off) @ 25°C：13ns/134ns
Test Condition：400V, 40A, 12.5Ohm, 15V
Reverse Recovery Time (trr)：49.6 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-4
Supplier Device Package：PG-TO247-4-3
Grade：-
Qualification：-

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IKZA40N65EH7XKSA1

Overview

The IKZA40N65EH7XKSA1 is a single IGBT with an integrated anti-parallel diode, utilizing Infineon's TRENCHSTOP™ IGBT7 technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C case temperature. The device operates within a junction temperature range of -40°C to +175°C and dissipates up to 210 W. Packaged in a PG-TO247-4-STD-NT3.7 format, it includes an internal emitter inductance of 13 nH.

Feature Summary

TRENCHSTOP™ IGBT7 technology optimized for hard switching and two- or three-level topologies
Integrated soft, fast recovery Emitter Controlled 7 (EC7) diode
Low collector-emitter saturation voltage combined with low switching losses
Humidity robustness and smooth switching behavior

Applications

Industrial UPS systems
EV-Charging infrastructure
String inverters
Welding equipment

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package variant and marking details. Confirm JEDEC47/20/22 industrial qualification requirements match the target application environment. Ensure thermal management design accommodates the specified junction-to-case thermal resistance values under maximum operating conditions.

Selection Notes

Select this component for applications requiring high-speed switching with minimal conduction losses. The integrated EC7 diode simplifies circuit design by eliminating external freewheeling diodes. Consider the 13 nH internal emitter inductance when designing gate drive loops to minimize parasitic effects during high-frequency operation.

Part Context

This part belongs to the TRENCHSTOP™ IGBT7 family, representing advanced silicon power semiconductor technology. It is designed as a discrete solution for medium-power conversion stages. The product is distinct from automotive-grade variants, as it lacks AEC Q100/Q101 qualification.