IKZA50N65SS5XKSA1

Overview

The IKZA50N65SS5XKSA1 is a CoolSiC hybrid discrete IGBT from the TRENCHSTOP 5 S5 family, co-packed with a full-rated 6th generation CoolSiC Schottky diode in a PG-TO247-4-3 package. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C case temperature. The device achieves ultra-low switching losses through the combination of TRENCHSTOP 5 technology and the Kelvin emitter pin. Key electrical parameters include a maximum power dissipation of 274 W at 25°C, a typical collector-emitter saturation voltage of 1.35 V, and a gate charge of 110 nC. The operating junction temperature range extends from -40°C to +175°C.

Feature Summary

• Combines TRENCHSTOP 5 IGBT with a full-rated 6th generation CoolSiC Schottky diode for benchmark efficiency in hard switching topologies.
• Utilizes a four-pin TO-247-4 package with an optimized pin-out that simplifies PCB design and improves wave soldering quality via increased clearance between Kelvin emitter and gate pins.
• Achieves ultra-low switching losses and very low on-state losses through advanced silicon carbide technology and the integrated Kelvin emitter pin.

Applications

• Industrial Switched-Mode Power Supplies (SMPS)
• Industrial Uninterruptible Power Supplies (UPS)
• Solar string inverters
• Energy storage systems
• Chargers

Procurement Notes

Verify the component against the official Infineon datasheet IFX-AAL370-004 to confirm technical specifications and revision status. Ensure the ordering suffix matches the required package variant. Confirm compliance with RoHS standards and lead-free plating requirements prior to integration into production designs.

Selection Notes

Select this component for applications requiring high efficiency in hard switching environments where reduced thermal management complexity is beneficial. The integrated CoolSiC diode eliminates the need for external anti-parallel diodes, allowing for simplified circuit layouts. Consider the 175°C maximum junction temperature capability for operation in elevated ambient conditions.

Part Context

This device belongs to the TRENCHSTOP 5 S5 product family, representing Infineon's highest-efficiency discrete 650 V IGBT technology. It is designed as a plug-and-play replacement for pure silicon devices, offering improved performance without requiring significant changes to existing driver circuits or system architectures.

Replacement Considerations

Officially documented substitutes within the same family include IKZA75N65SS5 and IKZA50N65RH5. Verify pin compatibility and thermal characteristics when substituting these models.

FAQ

What is the function of the fourth pin in the PG-TO247-4-3 package?

The fourth pin serves as the Kelvin emitter, which is separated from the main power emitter to minimize internal emitter inductance and improve switching performance.

Is this component qualified for automotive applications?

No, the product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.

How does the CoolSiC diode impact the switching behavior compared to standard silicon diodes?

The integrated 6th generation CoolSiC Schottky diode provides ultra-low switching losses and negligible reverse recovery charge, significantly reducing total switching energy compared to conventional silicon diodes.