IKZA75N65EH7XKSA1

$7.70

Description：IGBT TRENCH FS 650V 80A TO247-4
Series：TRENCHSTOP™

SKU:0fe348ad7fe9 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO247-4
Series：TRENCHSTOP™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 75A
Power - Max：338 W
Switching Energy：750µJ (on), 840µJ (off)
Input Type：Standard
Gate Charge：152 nC
Td (on/off) @ 25°C：26ns/199ns
Test Condition：400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr)：56 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-4
Supplier Device Package：PG-TO247-4-3
Grade：-
Qualification：-

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IKZA75N65EH7XKSA1

Overview

The IKZA75N65EH7XKSA1 is a single IGBT with an integrated anti-parallel diode, utilizing Infineon's TRENCHSTOP™ IGBT7 technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.65 V and a typical gate charge of 152 nC. Switching losses are optimized for hard switching applications.

Feature Summary

Integrates high-speed IGBT7 technology copacked with a soft, fast recovery Emitter Controlled 7 diode.
Provides very low collector-emitter saturation voltage combined with smooth switching behavior.
Optimized specifically for hard switching, two-level, and three-level topologies.
Features humidity robustness and qualified for industrial applications per JEDEC standards.

Applications

Industrial UPS systems
EV-Charging infrastructure
String inverters
Welding equipment

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and marking details. Confirm that the component meets the required industrial qualification standards as specified in the datasheet. Ensure compatibility with the intended thermal management solution given the power dissipation ratings. Cross-reference the manufacturer part number with authorized distributors to validate authenticity.

Selection Notes

Select this component for designs requiring low saturation voltage and optimized switching performance in hard switching environments. Consider the TO-247-4 package for through-hole mounting requirements. Evaluate the thermal resistance characteristics against the expected case temperatures. Verify that the 650 V rating aligns with the system's maximum operating voltage constraints.

Part Context

This device belongs to the TRENCHSTOP™ IGBT7 family from Infineon Technologies. It represents a discrete power semiconductor designed for high-efficiency power conversion. The product line focuses on reducing switching losses while maintaining robust industrial reliability. It serves as a key component in modern power electronics architectures.

Replacement Considerations

Consult official replacement lists or cross-reference tools provided by Infineon Technologies for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical parameters and thermal characteristics against the original specifications.