IMCQ120R034M2HXTMA1

$9.63

Description：SIC DISCRETE
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT),Tray

SKU:4243495d7850 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IMCQ120R034M2HXTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is SIC DISCRETE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IMCQ120R034M2HXTMA1

Description：SIC DISCRETE
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT),Tray
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for IMCQ120R034M2HXTMA1

IMCQ120R034M2HXTMA1

Single FETs, MOSFETs Overview

The Infineon IMCQ120R034M2HXTMA1 is a CoolSiC G2 1200 V SiC MOSFET in the PG-HDSOP-22-U03 Q-DPAK package. It features a drain-source on-state resistance of 34 mΩ at 25°C and supports a continuous DC drain current of 45 A at a case temperature of 100°C. The device includes XT interconnection technology for optimized thermal performance, enabling operation up to a virtual junction temperature of 200°C during overload conditions.

Single FETs, MOSFETs Feature Summary

Utilizes XT interconnection technology for superior thermal dissipation
Supports overload operation up to a virtual junction temperature of 200°C
Features robust body diode characteristics suitable for hard commutation
Demonstrates high immunity against parasitic turn-on with zero volt turn-off capability

Single FETs, MOSFETs Applications

Solid-state circuit breakers and solid-state relays
Electric vehicle charging infrastructure
Online and industrial uninterruptible power supplies
String inverters
General purpose drives and servo drives

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required package variant. Ensure compliance with JEDEC reliability standards for industrial applications. Review application notes regarding gate voltage selection to guarantee long-term operational stability.

Single FETs, MOSFETs Selection Notes

Select this component when top-side cooling capabilities are required for high-power density designs. Evaluate the thermal resistance parameters against the system's heat sink constraints. Consider the short-circuit withstand time and avalanche energy ratings for protection circuit design. Verify compatibility with recommended gate drive voltages for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolSiC G2 family of silicon carbide MOSFETs. It utilizes advanced trench technology to minimize conduction and switching losses. The Q-DPAK package provides a compact form factor with enhanced thermal management compared to traditional surface-mount options.