IMT17T110

Overview

The IMT17T110 is a dual PNP bipolar junction transistor (BJT) array manufactured by Rohm Semiconductor. It features a maximum collector-emitter breakdown voltage of 50V and a continuous collector current rating of 500mA per element. The device operates with a transition frequency of 200MHz and has a maximum power dissipation of 300mW. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 100mA and 3V, and a maximum collector-emitter saturation voltage of 600mV under specified conditions. It is housed in an SMT6 package, equivalent to SC-74 or SOT-457, designed for surface mount applications.

Feature Summary

• Dual PNP configuration within a compact surface-mount package
• High-speed operation capability with 200MHz transition frequency
• Integrated biasing for simplified circuit design

Applications

• General-purpose switching circuits
• Driver stages for logic interfaces
• Signal amplification in low-power systems

Procurement Notes

Verify component authenticity through authorized distributors. Confirm RoHS compliance status and check for obsolescence notices as the part may be discontinued. Ensure storage conditions meet moisture sensitivity level requirements before soldering.

Selection Notes

Select this component when a dual PNP configuration is required in a small footprint. Compare hFE and Vce(sat) specifications against load requirements. Consider thermal management due to 300mW power dissipation limit in the SMT6 package.

Part Context

This device belongs to Rohm's BJT array family, offering matched transistor pairs for balanced performance. It serves as a compact alternative to discrete dual-transistor solutions, reducing board space and assembly complexity in consumer and industrial electronics.

Replacement Considerations

Check for pin-compatible alternatives with similar Vceo and Ic ratings. Verify that substitute devices maintain comparable hFE and fT specifications to ensure circuit functionality remains unchanged.